ISSTT Proceedings

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Submillimeter-Wave Resonant-Tunneling Oscillators

Authors:
E.R. Brown
Abstract:
Recent advances in high-frequency resonant-tunneling diode (RTD) oscillators are described. Oscillations up to a frequency of 420 GHz have been achieved in the GaAs/AlAs system. These results are consistent with a lumped-element equivalent circuit model of the RTD. The model shows that the maximum oscillation frequency of the GaAs/AlAs RTDs is limited primarily by high series resistance, and that the power density is limited by low peak-to-valley current ratio. Recent oscillator results obtained with InGaAs/AlAs and InAs/AlSb RTDs show a greatly increased power density and indicate the potential for fundamental oscillations up to about 1 THz.
Categories:
Oscillators
Year:
1990
Session:
1
Full-text:
Download a PDF of this paper.
Page Number(s):
74-83