ISSTT Proceedings

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Potential and limitations of resonant tunneling diodes

Authors:
C. Kidner, J. Mehdi, J.R. East, G.I. Haddad
Abstract:
The existence of negative resistance in double barrier resonant tunneling structures has led to the proposal of various applications for these devices. For useful applications the bias circuit must be free of low frequency oscillations. Stability criteria for resonant tunneling diodes are investigated showing the effect of different modes of low frequency oscillation. The main results of the paper are (1) stable resonant tunneling diode operation is difficult to obtain, (2) the low frequency oscillation introduces a characteristic signature in the measured dc I-V characteristic, (3) the circuit and device conditions required for stable operation greatly reduce the amount of power that can be produced by these devices.
Categories:
Oscillators
Year:
1990
Session:
1
Full-text:
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Page Number(s):
84-103