ISSTT Proceedings

ISSTT Proceedings

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Submicrometer Devices and Monolithic Functions Using InAlAs/InGaAs Heterostructures

Authors:
Geok I. Ng, Youngwoo Kwon, Dimitris Pavlidis
Abstract:
A monolithic integrated circuit technology is reported using submicrometer HEMT's made with InAlAs/InGaAs heterostructures. The maximum oscillation frequency measured for 0.25┬Ám devices is 148GHz. Good characteristics are also shown for devices subjected to all the steps of the integrated technology. Monolithic heterostructure oscillators, doublers and mixers have been fabricated with this technology. They are designed for fundamental signal generation at 90GHz, frequency doubling to 180 GHz and mixing at 90 GHz. An analysis of the design procedures and characteristics is presented. This first generation novel heterostructure monolithic circuits are designed for implementation in receiver/sensor components operating in the THz region.
Categories:
Oscillators
Year:
1990
Session:
1
Full-text:
Download a PDF of this paper.
Page Number(s):
150-168