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Fundamental Mode Operation of Gunn Devices above 100 GHz

Authors:
R. Kamoua, J.R. East, G.I. Haddad
Abstract:
An Ensemble Monte Carlo model capable of predicting the high frequency performance of Gunn devices has been developed. Conventional structures (ohmic cathode) with a linearly graded doping in the active region are predicted to generate rf power at frequencies up to 220 GHz. We have also compared Gunn devices with three types of heterojunction injectors at the cathode : a forward biased triangular barrier, a reverse biased triangular barrier, and a rectangular barrier. In general the optimum frequency for power generation decreases as the injector becomes more efficient in reducing the dead zone. InP Gunn devices resulted in a slightly higher oscillation frequency and output power, however the temperature increase is much larger than GaAs devices.
Categories:
Oscillators
Year:
1991
Session:
2
Full-text:
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Page Number(s):
98-113