ISSTT Proceedings

ISSTT Proceedings

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Design and Evaluation of W and D Band TUNNETT Devices

Authors:
C. Kidner, G.I. Haddad, J.R. East, H. Eisele
Abstract:
Preliminary estimates of the power generation capability of Tunnel Transit Time (TUNNETT) devices in the 100 .-1000 GHz range are promising. A straight forward TUNNETT design procedure based on experimental characterization of the tunnel injector is outlined. A GaAs tunnel injector has been characterized and a nominal 100 GHz design is given. Preliminary results for tunnel injectors using InGaAs lattice matched to InP are described. The Gilden and Hines small signal analysis of transit time devices is modified and applied to TUNNETT devices. The RC time constant of the tunnel injector is shown to be an important figure of merit.
Categories:
Oscillators
Year:
1991
Session:
2
Full-text:
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Page Number(s):
114-132