ISSTT Proceedings

ISSTT Proceedings

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GaAs IMPATT Diodes for Frequencies above 100 GHz: Technology and Performance

Authors:
H. Eisele, R.K. Mains, G.I. Haddad, C.C. Chen
Abstract:
Recent experimental results have demonstrated good performance of GaAs IMPATT diodes around 94 GHz for both output power and noise measure. In this paper the first experimental results and some preliminary theoretical aspects for operation at higher frequencies are given together with an overview of the present status of the device technology. An improved small signal model and especially device simulations clearly depict that the device performance of GaAs 1MPATT diodes is strongly limited by the contact resistance at frequencies above 100 GHz. These results agree well with experimental data obtained from W-band (75 - 110 GHz) IMPATT diodes operated at frequencies above their optimum frequency. A maximum output power of 30 mW with an efficiency of 0.73 % was obtained at 105.05 GHz in a W-band cavity. The highest oscillation frequency was 110.2 GHz with 8 mW and 0.2 % efficiency in a D-band cavity. Material parameters of electrons in GaAs for electric fields up to 900 kVcm-¹ allow a more accurate design of IMPATT diodes for D-band (110 - 170 GHz) operation. Preliminary tests on these IMPATT diodes show pure avalanche breakdown and prove that tunneling is significant only for electric fields above 1.0 MVcm-¹.
Categories:
Oscillators
Year:
1991
Session:
2
Full-text:
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Page Number(s):
145-153