ISSTT Proceedings

ISSTT Proceedings

You searched for:search icon

No Keywords
Showing 0 of items from your search. Start over 

A Study of Subterahertz HEMT Monolithic Oscillators

Authors:
Youngwoo Kwon, Dimitris Pavlidis
Abstract:
A detailed study of monolithic InP-based HEMT oscillators for subterahertz operation is presented. InAlAs/InGaAs HEMT's have been optimized for high frequency operation and showed very high maximum oscillation frequencies (fmax) of 310 GHz using offset self-aligned T-gate technology. Power characteristics of HEMT oscillators are reported. An oscillation power of more than 10 mW was evaluated by large-signal analysis at 320 GHz using HEMT's with fmax = 450 GHz, Vbr = 10 V and a gate width (Wg) of 8 × 22.5 µm. Oscillator topology studies showed that complex feedback schemes such as dual and active feedback enhance the negative resistance. Push-push oscillator designs based on harmonic signal generation can finally be used to overcome the frequency barrier imposed by fmax.
Categories:
Sources
Year:
1992
Session:
1
Full-text:
Download a PDF of this paper.
Page Number(s):
58-72