ISSTT Proceedings

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A New Fabrication Technique for Back-to-Back Varactor Diodes

Authors:
R. Peter Smith, Debabani Choudhury, Suzanne Martin, M. A. Frerking, John K. Liu, Frank A. Grunthaner
Abstract:
A new varactor diode process has been developed in which much of the processing is done from the back of an extremely thin semiconductor wafer laminated to a low-ciidectric substrate. Back-to-back BNN diodes were fabricated with this technique; excellent DC and low-frequecy capacitance measurements were obtained. Advantages of the new technique relative to other techniques include greatly reduced frontside wafer damage from exposure to process chemicals, improved capability to integrate devices (e.g., for antenna patterns, transmission lines, or wafer scale grids), and higher line yield. BNN diodes fabricated with this technique exhibit approximately the expected capacitance-voltage characteristics while showing leakage currents under 10 mA at voltages three times that needed to deplete the varactor. This leakage is many orders of magnitude better than comparable Schottky diodes.
Categories:
Varactors
Year:
1992
Session:
3
Full-text:
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Page Number(s):
158-163