ISSTT Proceedings

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New Approach to the Design of Schottky Barrier Diodes for THz Mixers

Authors:
A. Jelenski, A. Grüb, V. Krozer, H.L. Hartnagel
Abstract:
Near—ideal GaAs Schottky barrier diodes especially designed for mixing applications in the T Hz frequency range are presented. A diode fabrication process for submicron diodes with near—ideal electrical and noise characteristics is described. This process is based on the electrolytic pulse etching of GaAs in combination with an in—situ platinum plating for the formation of the Schottky contacts. Schottky barrier diodes with a diameter of 1 µm fabricated by the process have already shown excellent results in a 650 GHz waveguide mixer at room temperature. A conversion loss of 7.5 dB and a mixer noise temperature of less than 2000 K have been obtained at an intermediate frequency of 4 GHz. The optimization of the diode structure and the technology was possible due to the development of a generalized Schottky barrier diode model which is valid also at high current densities. The common diode design and optimization is discussed on the basis of the classical theory. However, the conventional formulas are valid only in a limited forward bias range corresponding to currents much smaller than the operating currents under submillimeter mixing conditions. The generalized new model takes into account not only the phenomena occurring at the junction such as current dependent recombination and drift/diffusion velocities, but also mobility and electron temperature variations in the undepleted epi—layer.
Categories:
Detectors, Mixers
Year:
1992
Session:
12
Full-text:
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Page Number(s):
631-642