ISSTT Proceedings

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Numerical Simulation of TUNNETT and MITATT Devices in the Millimeter and Submillimeter Range

Authors:
Chien-Chung Chen, Richard K. Mains, George I. Haddad, Heribert Eisele
Abstract:
Numerical simulation programs for two-terminal transit-time devices based on drift-diffusion and energy-momentum transport models, with valence band to conduction band tunneling incorporated, have been developed. These programs can deliver accurate TUNNETT and MITATT device simulation results in the millimeter and submillimeter range. As the simulation results show, while the energy-momentum program is more accurate in the higher frequency range, the drift-diffusion program, which demands less computer resources, is suitable for W band devices. Simulation results for GaAs TUNNETT and MITATT devices by these two methods will be presented and compared. The results obtained so far indicate that these programs provide useful tools for high frequency device structure design and optimization. In particular the energy-momentum model is required for devices operating at THz frequencies.
Categories:
Sources
Year:
1993
Session:
7
Full-text:
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Page Number(s):
362-376