ISSTT Proceedings

ISSTT Proceedings

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GaAs Schottky Diodes for THz Mixing Applications

Authors:
P.A.D. Wood, W.C.B. Peatman, D.W. Porterfield, T.W. Crowe
Abstract:
GaAs Schottky diodes are currently the most sensitive heterodyne receiver elements for applications above 1 THz which require high spectral resolution and broad bandwidth. Diode performance can be further improved by optimizing parameters such as anode diameter and doping concentration. Based on previous experimental and theoretical research, improved diodes have been fabricated in the Semiconductor Device Laboratory of the University of Virginia. These diodes have an epitaxial layer doping density of 1×10 18 cm-3 and zero-bias junction capacitance as low as 0.25 fF. Diode performance was evaluated using video responsivity, mixer noise temperature and mixer conversion loss. These measurements have confirmed earlier predictions that for higher frequencies higher doping densities and smaller anode diameters must be used.
Categories:
Receivers, Schottky Devices
Year:
1993
Session:
8
Full-text:
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Page Number(s):
377-391