ISSTT Proceedings

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Planar THz Schottky Diode Based on a Quasi Vertical Diode Structure

Authors:
A Simon, A Grüb, V. Krozer, K. Beilenhoff, H.L. Hartnagel
Abstract:
Whisker contacted GaAs Schottky barrier diodes are presently the standard devices for heterodyne mixing applications at THz frequencies. Due to reliability and handling problems and with regards to the recently proposed integrated antenna structures, much effort has been undertaken to develop planar whiskeriess Schottky diodes. Recent approaches to planar diodes, based on FET—like structures, could not overcome the principal problems leading to a high parasitic shunt capacitance and a high series resistance. In this paper we present a novel approach for the planar diode concept. It is directly deduced from the vertical structure of the whisker contacted diode, making use of the many advantages and mature technology of the whisker contacted Schottky diode concept. On top of a mesa, the anode is connected with an airbridge to a contact pad. By means of via hole etching, the backside ohmic contact is connected with a contact pad at the surface. We have developed a technology for fabricating these diodes and describe the structure and the main technological aspects. Simulations have shown that in comparison to the recent approaches this concept shows some very promising features. In particular the minimum series resistance is comparable to the series resistance of the whisker contacted diode, due to the vertical current flow through the mesa. which is similar to the whisker Schottky diode structures operable at THz frequencies. This structure also exhibits a low parasitic shunt capacitance, due to a combined via hole and air bridge technology.
Categories:
Receivers, Schottky Devices
Year:
1993
Session:
8
Full-text:
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Page Number(s):
392-403