ISSTT Proceedings

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Planar GaAs Schottky Diode Fabrication: Progress and Challenges

Authors:
William L. Bishop, Thomas W. Crowe, Robert J. Mattauch
Abstract:
Schottky barrier diodes for high frequency mixer applications are usually made by forming a honey-comb array of circular metal anodes on n-type GaAs. One of these micron to sub-micron sized anodes is contacted with a sharpened wire (whisker) and a large area backside ohmic contact completes the device. This structure is relatively simple to fabricate and it benefits from the very low shunt capacitance presented by the whisker. However, production of high quality whisker contacts is technically demanding and multiple diode arrangements are difficult to implement. Also, electrical and mechanical qualification of whisker-contacted diodes for use in space is expensive and time consuming.
Categories:
Receivers, Schottky Devices
Year:
1993
Session:
8
Full-text:
Download a PDF of this paper.
Page Number(s):
415-429