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A Study of Reliability and Physical Properties of Schottky Barriers with Respect to THz Applications

Authors:
A. Grüb, V. Krozer, A. Simon, H.L. Hartnagel
Abstract:
Whisker contacted GaAs Schottky barrier diodes are the standard devices for mixing and multiplier applications in the THz frequency range. With the decreasing size of Schottky diodes for operation at higher frequencies, the reliability and the physical understanding of the Schottky barrier becomes increasingly important. In this contribution, we present new results concerning the reliability of Schottky diodes and new insight into the physical properties of Schottky junctions, especially at low current densities. For these purposes a number of different Schottky diodes have been fabricated with varying epi—layer doping concentrations and anode diameters.
Categories:
Receivers, Schottky Devices
Year:
1993
Session:
8
Full-text:
Download a PDF of this paper.
Page Number(s):
430-441