ISSTT Proceedings

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The Fabrication and Performance of Planar Doped Barrier Subharmonic Mixer Diodes

Authors:
Trong-Huang Lee, Jack R. East, Chen-Yu Chi, Robert Dengler, Imran Mehdi, Peter Siegel, George I. Haddad
Abstract:
The PDB (Planar Doped Barrier) diode consists of a p+ doping spike between two intrinsic layers and n+ ohmic contacts. Such devices can have an anti-symmetric current vs. voltage characteristic. The capacitance is approximately constant with the applied voltage, and the barrier height and device capacitanc.e are easily adjustable. These characteristics make the PDB a candidate for millimeter- and submillimeter-wave subharmonic mixers. We have fabricated a series of 2 and 4 µm diameter diodes with different barrier designs using a GaAs epi-layer. These devices are planarized using an air-bridge and a surface channel etch. After completely removing the substrate, the devices are mounted on quartz substrate to reduce parasitic effects. Diced diodes were tested as subharmonic mixers at 200 GHz in both a quasi-optical planar wideband subharmonic receiver and a planar-diode waveguide-mixer. The results from quasioptical measurement show that a 0.23 V (and 0.4 V) barrier height GaAs diode with 2.0 µA (and 5 nA) of saturation current gives a DSB conversion loss of 10.8 dB (and 9.5 dB) and a noise temperature of 3795°K (and 2450°K). The results available from waveguide mixers are for a similar 0.23 V barrier height PDB and have a minimum conversion loss improved by 0.6 dB (10.2 dB) and noise temperature reduced by 220°K (3575°K), but required only less than 1 milliwatt of LO power.
Categories:
Receivers, Schottky Devices
Year:
1993
Session:
10
Full-text:
Download a PDF of this paper.
Page Number(s):
500-514