ISSTT Proceedings

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Noise Temperatures and Conversion Losses of Submicron GaAs Schottky-Barrier Diodes

Authors:
H.-W. Hübers, T.W. Crowe, G. Lundershausen, W.C.B. Peatman, H.P. Röser
Abstract:
We have determined system noise temperatures, mixer noise temperatures and conversion losses of two whisker—contacted submicron GaAs Schottky barrier diodes at THz frequencies. Both diodes were fabricated with new technologies and have thin epitaxial layers with depletion thicknesses close to the optimum value of about 300Å. The diodes have exceptional performance as THz mixer elements with noise temperatures and conversion losses 2-3 times below the best previous reported values. The effect of cooling on the diode performance is also investigated.
Categories:
Receivers, Schottky Devices
Year:
1993
Session:
10
Full-text:
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Page Number(s):
522-527