ISSTT Proceedings

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Performance of GaAs TUNNETT Diodes as Local Oscillator Sources

Authors:
H. Eisele, C.-C. Chen, R. Mains, G.I. Haddad
Abstract:
Improved heat dissipation in TUNNETT diodes on diamond heat sinks has lead to RF power levels of up to 95 mW and dc to RF conversion efficiencies of up to 5.9 % between 104 GHz and 111 GHz. These values for power and efficiency exceed those of Gunn devices in this frequency range and together with the clean spectra and demonstrated phase-locking capabilities make GaAs TUNNETT diodes suitable for local oscillator applications. TUNNETT diodes in second-harmonic mode yielded an RF output power of up to 0.6 mW between 210 GHz and 220 GHz. Diodes on diamond heat sinks show clear signs of saturation in the dc to RF conversion efficiency, which can be attributed to about 60 % higher bias current densities than originally assumed in the structure design. Extensive numerical simulations using a computer program with an energy-momentum model show good agreement between predictions and experimental results and can provide realistic estimates for the RF performance at higher submillimeter-wave frequencies.
Categories:
Devices
Year:
1994
Session:
9
Full-text:
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Page Number(s):
622-628