ISSTT Proceedings

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A Novel Micron-Thick Whisker Contacted Schottky Diode Chip

Authors:
A. Simon, A. Grüb, M. Rodriguez-Gironés, H.L. Hartnagel, J. Brune, M. Raum, H. Brand, R. Zimmermann
Abstract:
Although planar diode technology recently has improved significantly, whisker contacted Schottky diodes are required for applications above I THz. This paper presents a novel whiskered substrate-less diode chip which exhibits a significantly reduced DC series resistance. Due to the extremely small chip geometries, these diodes are also expected to be more suitable for operation at THz frequencies than the conventional diode chips because of the reduced skin effect resistance. The novel diode chip consists of a 100-250 µm wide gold foil with a 10-30 µm wide and 3 µm high GaAs mesa on it. The typical honeycomb-array of anodes is located on top of the mesa. The diameters of the gold foil and the GaAs mesas can be varied according to the mixer geometry.
Categories:
Diodes, Receivers
Year:
1995
Session:
1
Full-text:
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Page Number(s):
4-12