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Low-Noise MOVPE-Grown Planar InGaAs Mixer Diodes

Authors:
P. Marsh, D. Pavlidis, H. Kong
Abstract:
InGaAs lattice-matched to InP is an excellent candidate for applications requiring high mobility and conductivity. Schottky junctions on InGaAs exhibit bathers ([Phi]b) in the neighborhood of 0.25eV and high mobility contributes to the low n+ sheet resistances of 2.0-5[Omega]/[square] for lµm n+ InGaAs layers (ns 1.5×lO 19/cm³ µn = 1800cm²/volt•sec) grown with our in-house Metalorganic Vapor Phase Epitaxy (MOVPE) system. This material is therefore well suited for high-performance THz diodes since it provides low [Phi]b, as necessary for low required LO power and has low specific contact resistance needed for reduced losses and high-frequency operation. The design, material growth, fabrication, and characterization of InGaAs planar mixers is reported. These mixers demonstrated a state-of-the-art performance of 261K DSB noise temperature (Tmix) with a corresponding conversion loss (Lmix) of 5.4dB at LO, RF, and IF frequencies of 92GHz, 92GHz ± 1.4GHz, and 1.4GHz respectively. Planar mixer diodes were produced using a novel chemical dice process that performs all lithography and wafer thinning steps before airbridge fabrication, thus greatly reducing the possibility of damage to airbridge and anodes. The mixer diodes were quasi-optically tested while mounted on spiral antennae.
Categories:
Diodes, Receivers
Year:
1995
Session:
1
Full-text:
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Page Number(s):
45-53