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NbN Mixers and Tuning Circuits for 630 GHz: Design and Preliminary Measurements

Authors:
M. Salez, J.A. Stern, W.R. McGrath, H.G. LeDuc, P. Febvrec
Abstract:
At frequencies above the gap frequency of niobium (710 GHz), the performance of Nb/A10x/Nb SIS mixers degrades and the losses in the niobium films of the superconductive Nb/SiO/Nb microstrip circuits used to provide a good RF impedance match severely limit the performance. Therefore, we are investigating the properties of NbN mixers, and in particular of NbNiSiO/NbN microstrip circuits integrated with submicron NbN/MgO/NbN tunnel junctions. The very large penetration depth of NbN (3000-4000 Å) makes the circuit design difficult and also puts critical constraints on alignment during fabrication. We present here the design of several rf tuning circuits for 630 GHz including novel symmetric designs which ease the alignment tolerances. In addition, a new approach for determining experimentally the penetration depth in the NbN films is presented.
Categories:
SIS Receivers
Year:
1995
Session:
2
Full-text:
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Page Number(s):
103-116