ISSTT Proceedings

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InP Gunn Devices and GaAs TUNNETT Diodes as Low-Noise High-Performance Local Oscillators in Fundamental Mode

Authors:
H. Eisele, G. I. Haddad
Abstract:
Improved fabrication technologies significantly increased the RF power levels that are available from GaAs TUNNETT diodes and InP Gunn devices. RF power up to 100 mW around 105 GHz and more than 100 mW around 132 GHz were obtained from TUNNEIT diodes and Gunn devices, respectively. Corresponding dc-to-RF conversion efficiencies reach 6 % in TUNNETT diodes and 2.5 % in Gunn devices. Free-running oscillators with both types of devices exhibit excellent noise performance up to the highest power levels and typical phase noise, measured at a frequency off-carrier of 500 kHz, is below - 94 dBaHz for TUNNETT diodes and below - 100 dBc/Hz for Gunn devices. At lower power levels, TUNNE1T diodes show the best noise measure (< 20 dB) of any two-terminal devices.
Categories:
Local Oscillators, Sources
Year:
1995
Session:
4
Full-text:
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Page Number(s):
167-175