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Effect of voltage modulation on the shape of the depeletion layer of a submillimeter wave Schottky varactor

Authors:
Jyrki T. Louhi and Antti V. Räisänen
Abstract:
Schottky varactor frequency multipliers are used to generate local oscillator power at millimeter and submillimeter wavelengths. Multiplication efficiency depends on varactor parameters such as capacitance—voltage characteristic and possible current saturation. The aim of this work is to develop the equivalent circuit of the submillimeter wave Schottky varactor in order to model the effect of fast voltage modulation on the three-dimensional shape of the depletion layer. The effect of voltage modulation can be studied by solving the potential and electron conduction currents in the epitaxial layer of the Schottky varactor. In this work the potential and the electron currents have been calculated from device physics by using numerical methods. According to our results the shape of the depletion layer is strongly affected, when the voltage modulation over the pumped varactor is rapid. The dynamic shape of the depletion layer during the voltage sweep affects the junction capacitance as well as the electron velocity saturation. These effects should be included to the equivalent circuit of the Schottky varactor. This can be done by modifying the model obtained by using static equations.
Categories:
Varactors
Year:
1995
Session:
9
Full-text:
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Page Number(s):
408-422