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Submicron Schottky-Collector AlAs/InGaAs Resonant Tunnel Diodes

Authors:
S.C. Martin, R.E. Muller, K. Nummila, R.P. Smith, M. Reddy, M.J. Mondry, M.J. W. Rodwell, D. H. Chow, J. N. Schulman
Abstract:
Resonant tunnel diodes (RTDs) are currently the widest bandwidth semiconductor devices useful for high frequency oscillators and picosecond pulse generators. 712 GHz oscillators and 1.7 Ps pulse generators, fabricated with 1.0 THz bandwidth InAs/AlSb RTDs, are some examples of high speed RTD applications. Here, we report the fabrication and the dc and microwave characteristics of AlAs/In0.53Ga0.47 As Schottky-collector resonant tunnel diodes (SRTDs) with deep submicron Schottky collectors and an estimated intrinsic maximum frequency of oscillation fmax of 2.2 THz. The process is planar, so monolithic integration of single devices with matching circuitry for wave guide-based LO's or of many SRTDs into quasi-optical oscillator arrays is possible.
Categories:
Varactors
Year:
1995
Session:
9
Full-text:
Download a PDF of this paper.
Page Number(s):
458-460