ISSTT Proceedings

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Thermal Considerations in the Design of D-Band InP Gunn Devices

Authors:
Ridha Kamoua
Abstract:
Recent theoretical and experimental results have established that fundamental mode operation of InP Gunn devices could be obtained over much of the D-Band frequency region. In particular, a design structure with a graded doping profile increasing from the cathode towards the anode has exhibited superior performance over flat doped structures. However, it is observed that experimentally obtained power levels fell short of the theoretical predicted values. Upon mounting the same devices with the graded doping profile on a diamond heat sink instead of a copper heat sink, a considerable increase in the output power was obtained. Typical power levels exceeded 100 mW at 130 GHz. This clearly indicates that thermal effects play a major role in limiting Gunn performance at high frequencies. To accurately take into account heat generation and dissipation in the design of D-Band Gunn devices, a nonisothermal Monte Carlo computer model has been developed. This model accounts for the heat generation and the effect of lattice heating on the electron transport. Simulation results of the graded structure with copper and diamond heat sinks will be presented and compared to the experimental data. In addition, ongoing efforts to further improve the performance through the use of heterojunction cathode injectors will be discussed. It is predicted that more than 140 mW of cw output power could be achieved at 140 GHz with conversion efficiencies exceeding 4%.
Categories:
Multipliers, Sources
Year:
1996
Session:
2
Full-text:
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Page Number(s):
103-115