ISSTT Proceedings

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An Integrated 435 GHz Quasi-Optical Frequency Tripler

Authors:
M. Shaalan, D. Steup, A. Grüb, A. Simon, C.I. Lin, A. Vogt, V. Krozer, H. Brand, H.L. Hartnagel
Abstract:
Current saturation and reverse breakdown voltage limit the power handling capability of single Schottky diodes. This limitation can be overcome by the technique of power combining using an array of diodes. A quasi-optical design limits neither the number of diodes nor the size of the chip, on which the diodes are integrated. Based on the promising results obtained with the quasi-optical frequency doubler at 290 GHz, and aiming at developing an all-quasi-optical local oscillator source, a 435 GHz quasi-optical tripler device is presented. The tripler element is based on a back-to-back pair of GaAs Schottky varactor diodes located on GaAs and integrated with a planar folded dipole antenna. A chip area of 1650 × 1650 µm², geared to the beam waist of the Gaussian beam, comprises thirty tripler elements. The fabrication and initial characterisation are presented. The measurement setup for the radio frequency performance evaluation of the integrated device, which is yet to be performed, is described.
Categories:
Multipliers, Sources
Year:
1996
Session:
2
Full-text:
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Page Number(s):
176-186