ISSTT Proceedings

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Tuning Circuit for NbN SIS Mixer

Authors:
V.Yu. Belitsky, E.L. Kollberg
Abstract:
NbN SIS junction for mixer application has been investigated theoretically in the frequency band 200-2500 GHz considering the junction as a distributed element. We studied the performance of a distributed NbN SIS mixer regarding its particular RF and IF losses. For NbN material we suggested resonant distributed SIS mixer that introduces the self-tuned SIS mixer element. The resonant type distributed SIS mixer is a good choice for NbN mixers since this self-compensated SIS junction tuned to the desirable frequency band is much less sensitive to the embedding circuit impedance. Hence the mixer performance is less sensitive to fabrication accuracy of the tuning circuit and NbN film quality.
Categories:
Components, Materials
Year:
1996
Session:
3
Full-text:
Download a PDF of this paper.
Page Number(s):
234-250