ISSTT Proceedings

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Progress on Characterization with Integrated Test Structures of Dielectric and Superconducting Films for SIS Mixer Circuits

Authors:
D. M. Lea, A.W. Lichtenberger
Abstract:
The growing use of superconductor-insulator-superconductor (SIS) mixers at both millimeter and submillimeter wavelengths has been accompanied by an increased reliance on integrated tuning and coupling elements. These planar structures, fabricated on the same chips as Nb/Al-AlOx/Nb SIS junctions, can be used as either a complement or alternative to mechanically adjustable waveguide backshorts. For optimal performance, designs of these structures must be based on accurate predictions of the following crucial film parameters: (1) dielectric constants [epsilon]r of the oxides used in the tuning elements, (2) magnetic penetration depth [lambda] of the Nb films, (3) specific capacitance Cs of the SIS trilayer, and (4) critical current density Jc of the SIS trilayer. Here we report on measurements of these quantities at T = 4.2 K using test structures that were fabricated by the same process which we use for Nb/Al-AlOx/Nb mixer circuits.
Categories:
Components, Materials
Year:
1996
Session:
5
Full-text:
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Page Number(s):
356-368