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THz Signal Generators Based on Lift-Off LT-GaAs on Transparent Substrates

Authors:
H.-M. Heiliger, M. Voßebürger, H.G. Roskos, R. Hey, K. Ploog, H. Kurz
Abstract:
Low-temperature molecular-beam-epitaxy-(MBE)-grown GaAs (LT-GaAs) is recognized as a superior photoconductive material because of the combined advantages of high carrier mobility, short conductance lifetime and high dark resistivity. Here, LT-GaAs is employed for the fabrication of (sub)picosecond photoconductive switches for THz guided-wave and free-space-radiation applications. The switches are realized on LTGaAs- on-glass and LT-GaAs-on-sapphire substrates after transfer of the LT GaAs films via epitaxial lift-off (ELO) and van-der-Waals-bonding procedure from the GaAs growth substrate to glass or sapphire, respectively.
Categories:
Components, Materials
Year:
1996
Session:
6
Full-text:
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Page Number(s):
400-408