ISSTT Proceedings

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Quasi-Planar Schottky Diode Design

Authors:
Roland Nitsche, Ruth Titz, Erwin M. Biebl
Abstract:
In the THz region up to now no planar mixer designs are available. In order to improve the performance of GaAs Schottky diode mixers at 2.5THz the classical open structure with corner cube and whisker antenna was modified. In this new design the diode chip is mounted on a ceramic plate with a photolithographic structure leading to more reproducible and defined conditions for the incoupling radiation. This structure will allow to build a planar amplifier and impedance transformer in immediate neighbourhood to the diode chip. A reduction of the IF losses due to the short distances and the missing SMA connectors is expected. The impedance transformer will be designed as an active element which can adapt the impedance of the pumped diode to the input impedance of the first low noise amplifier. The first measurements of the system-noise temperature are presented.
Categories:
Mixers, Schottky Devices
Year:
1996
Session:
8
Full-text:
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Page Number(s):
488-493