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Quartz-Based GaAs Schottky Diodes-Lifetime and Failure Analysis

Authors:
R. Lin, A. Pease, R. Dengler, D. Humphrey, T. Lee, S. Kayali, I. Medhi
Abstract:
A previously reported technology that allows for the fabrication of semiconductor devices based on quartz (or other dissimilar substrates) has resulted in state-of-the-art mixer performance at frequencies up to 640 GHz. The present work will discuss the procedure that has been used to quantify the reliability of such devices for space-borne missions. A number of accelerated lifetime tests have been conducted. It is concluded that these devices exhibit lifetimes that are consistent with other GaAs devices for space applications. Our accelerated lifetime data, analyzed with the Arrhenius-lognormal model, predict a room temperature MTTF on the order of 1010 hours, a value that is comparable to conventional high-frequency planar Schottky diodes. This result demonstrates that the use of an appropriate epoxy to obtain GaAs devices on quartz substrates does not reduce the lifetime of the devices.
Categories:
Schottky Devices
Year:
1998
Session:
9
Full-text:
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Page Number(s):
511-520