ISSTT Proceedings

ISSTT Proceedings

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Progress in Submillimeter Wavelength Integrated Mixer Technology

Authors:
Steven M. Marazita, Kai Hui, Jeffrey L. Hesler, William L. Bishop, Thomas W. Crowe
Abstract:
Higher levels of device and circuit integration lead to vast improvements in millimeter and submillimeter wave Schottky mixer performance. Monolithic technologies exhibit wider operating bandwidth, reduced noise temperature, and lower LO power consumption than flip-chip methods. In addition integrated technologies offer a simplified design process, easier assembly, and drastically improved repeatability. These characteristics make planar integrated Schottky mixers the most promising technology for radiometers when cryogenic cooling is not acceptable. This discussion focuses on the development of 585 GHz and 1 THz integrated mixers. The devices are fabricated using the MASTER wafer bonding technique on a hybrid GaAs/quartz substrate. At 585 GHz the integrated mixer's DSB performance has been measured to be Tsys= 1608 K, Tmix.1184 K, Lmix=6.5 dB at PL0=1.6 mW. If the LO power is reduced to PL0=300 µW, DSB Tsys is only 1890 K. This is the best room temperature mixer ever reported above 500 GHz for either planar or whisker-contacted technologies.
Categories:
Mixers, Schottky Devices
Year:
1999
Session:
2
Full-text:
Download a PDF of this paper.
Page Number(s):
74-85