ISSTT Proceedings

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Anti-Parallel Planar Schottky Diodes for Subharmonically-Pumped 220 GHz Mixer

Authors:
C.-I. Lin, M. Rodríguez-Gironés, A. Simon, J, Zhang, P. V. Püronen, V. S. Möttönen, J. T. Louhi, H. L. Hartnagel, A. V. Räisänen
Abstract:
Anti-parallel planar Schottky diodes using the Quasi-Vertical Schottky Diode (QVD) geometry, developed by TU Darmstadt, have been fabricated and mounted on subharmonically-pumped waveguide mixers at 220 GHz. The design of the waveguide mixers was done at Helsinki University of Technology. The diode's geometry, an evolution of the substrateless Schottky diode for integration in planar circuits, assures intrinsically-vertical current flow and minimizes the volume of the semiconductor diode mesa. This improves heat sink capability and simultaneously reduces diode parasitics, in particular high-frequency series-resistance increase due to skin effect. Furthermore, gold pillars grown on the contact pads confer the diode higher physical strength and protect anode air-bridge contacts, both facilitating soldering to the microstrip filters and allowing a safe flip-chip mounting technique. The QVD shows DC parameters comparable to those of whisker-contacted substrateless diodes. Measured forward I-V characteristics are identical, which contributes to minimize mixer conversion loss. The technology and the electrical characteristics of the Anti-Parallel Quasi-Vertical Schottky Diodes (APQVSD) are presented, as well as the first measurement results obtained with the 220 GHz subharmonic mixer.
Categories:
Mixers, Schottky Devices
Year:
1999
Session:
2
Full-text:
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Page Number(s):
86-94