ISSTT Proceedings

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State of the Art of Two-Terminal Devices as Millimeter- and Submillimeter-Wave Sources

Authors:
Heribert Eisele, George I. Haddad
Abstract:
Devices from three major groups of two terminal devices, i.e., transit-time diodes, transferred electron devices, and quantum-well devices, have been employed successfully to generate RF power at frequencies above 200 GHz. At frequencies up to 300 GHz, Si IMPATT diodes yielded the highest RF power levels from any fundamental solid-state source, e.g., 50 mW at 245 GHz. However, the RF power of more than 1 mW from InP Gunn devices around 315 GHz is the highest from any such fundamental source above 300 GHz. GaAs TUNNETT diodes operating as efficient self-oscillating frequency multipliers generated RF power levels of more than 10 mW at 202 GHz. GaAs IMPATT diodes, e.g., yielded 2 mW at 232 GHz. The highest oscillation frequency of 714 GHz was reported from an InAs/AlSb RTD with an RF output power of 0.3 µW, whereas GaAs/AlAs superlattice electronic devices yielded 0.2 µW at 224 GHz. This paper reviews the power generation capabilities and basic properties of these two terminal devices as fundamental RF sources. It compares them directly at the RF power level, but also in terms of RF power per unit area as a figure of merit.
Categories:
Semiconductors
Year:
2000
Session:
3
Full-text:
Download a PDF of this paper.
Page Number(s):
139-152