ISSTT Proceedings

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The Oxide Barrier Varactor

Authors:
Thomas W. Crowe, Yiwei Duan
Abstract:
The heterostructure barrier varactor consists of a layer-cake of alternating low and high band-gap semiconductor materials, for example GaAs and AlGa,As. As bias is applied in either direction across the layers, the electrons in the moderately doped low band-gap layers form a two-dimensional electron gas against the conduction band discontinuity at the heterojunction. Thus, most of each low band-gap layer becomes depleted, forming capacitance modulation layers while the high band-gap materials are barrier layers to prevent conduction current. Since these devices have a symmetric capacitance-voltage characteristic centered at zero-bias, they cannot generate even order harmonics and don t require a bias circuit or even harmonic idler circuits. Thus, they are ideal frequency triplers and quintuplers. Also, since any number of barriers can be epitaxially stacked, the power handling of the device can be made quite large.
Categories:
Semiconductors
Year:
2000
Session:
3
Full-text:
Download a PDF of this paper.
Page Number(s):
153-154