ISSTT Proceedings

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Power Generation with Fundamental and Second-Harmonic Mode InP Gunn Oscillators - Performance Above 200 GHz and Upper Frequency Limits

Authors:
Ridha Kamoua, Heribert Eisele
Abstract:
This paper investigates the performance of InP Gunn devices at high millimeter- and submillimeter-wave frequencies through computer simulations. The objective is to estimate the highest frequency at which InP Gunn devices can realistically be used as oscillators. The simulation tool uses the ensemble Monte Carlo method to model the Gunn device while the harmonic balance technique is employed to describe the device-circuit interaction. Thermal effects are taken into account by coupling a heat flow equation to the Monte Carlo algorithm. Results based on this model showed good agreement with available experimental data both for fundamental and second harmonic InP Gunn oscillators. This agreement establishes an acceptable confidence level on the applicability and accuracy at high frequencies. Therefore, the model is used to predict the device performance when the length of the active region in the device is scaled down to less than 1 ┬Ám. Results indicate that oscillations up to at least 500 GHz are possible in a second-harmonic mode. These simulations take into consideration realistic load and series resistances as well as safe operating temperatures.
Categories:
Semiconductors
Year:
2000
Session:
3
Full-text:
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Page Number(s):
155-161