ISSTT Proceedings

ISSTT Proceedings

You searched for:search icon

No Keywords
Showing 0 of items from your search. Start over 

200 And 400 GHz Schottky Diode Multipliers Fabricated With Integrated Air-Dielectric 'Substrateless' Circuitry

Authors:
E. Schlecht, J. Bruston, A. Maestrini, S. Martin, D. Pukala, R. Tsang, A. Fung, R. P. Smith, I. Mehdi
Abstract:
A novel semiconductor fabrication process has been developed at the Jet Propulsion Laboratory for millimeter and submillimeter-wave monolithic integrated circuits. The process integrates the active devices, Schottky diodes, with planar metallic transmission lines. To reduce the RF losses in the passive circuitry, the semiconductor substrate under the transmission lines is etched away, leaving the metal suspended in air and held only by its edges on a semiconductor frame. The frame also allows the circuit to be handled and mounted easily, and makes the whole structure more robust. Moreover, this technology allows for the diodes to be positioned precisely with respect to the circuitry and can be scaled for higher frequency applications. Metallic beam-leads are used extensively on the structure to provide mechanical handles as well as current paths for DC grounding and diode biasing. To demonstrate the utility of this technology, broadband balanced planar doublers based on the concepts in have been designed in the 200 and 400 GHz range. Extensive simulations were performed to optimize the diodes and design the circuits around our existing device fabrication process. The 368-424 GHz circuits were measured and achieve 15% peak efficiency at 369 GHz. The 3-db bandwidth of the fix-tuned doubler is around 9%. The maximum output power measured is around 6 mW and drops down to lmW at 424 GHz. This represents the highest frequency waveguide based planar doubler to date known to the authors.
Categories:
Micromachining
Year:
2000
Session:
6
Full-text:
Download a PDF of this paper.
Page Number(s):
287-295