ISSTT Proceedings

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Resonant Tunneling THz Oscillator at Fixed Bias Voltages

Authors:
Peiji Zhao, H. L. Cui, D. Woolard
Abstract:
Resonant tunneling diodes (RTD) have been studied as high frequency oscillators for many years. Traditionally, RTD's are implemented purely as a negative differential resistance element with one energy storage element, the device capacitance. In terms of this design approach, oscillations must be generated by limit-cycles which exchange energy with resonating elements residing in the external bias circuit. This approach of extrinsically inducing oscillations will always encounter output power restrictions by external looses and low frequency design constraints. At the begin of the 90's, Jensen and Buot, in their numerical simulation of a double barrier quantum well system, found that there are intrinsic high frequency current oscillations in RTD. The current oscillations are independent of external circuit. Their results provide evidence for a possible intrinsic approach to high frequency power generation. However, the causes of the intrinsic current oscillations are not clear for about ten years. It is very important to understand the causes of the oscillations since they are important to the intrinsic approach of design of the THz RTD oscillators. In this paper, we will explain the operational principle of the intrinsic THz RTD oscillators, the origin of the intrinsic high frequency current oscillations.
Categories:
Poster Session
Year:
2000
Session:
7
Full-text:
Download a PDF of this paper.
Page Number(s):
336-340