ISSTT Proceedings

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High Q InP-Based Varactor Diodes

Authors:
T. David, S. Arscott, P. Mounaix, X. Mélique, F. Mollot, O. Vanbésien, M. Chaubet, D. Lippens
Abstract:
We report on high quality-factor Heterostructure Barrier Varactor making benefit of epitaxial stacking and planar integration, with a cut-off frequency in the far infrared region. To this aim, high doping concentrations in the depletion (2×10 17 cm-³) and contact (1×10 19cm-³) InGaAs regions lattice matched to an InP substrate and an InAlAs/AlAs blocking barrier scheme were used Planar integration of the devices with a number of barriers up to eight in coplanar waveguide and series-type configurations shows a zero-bias capacitance of 3.4 fF/µm² per barrier and a conductance of 3.3 nS/µm² along with an intrinsic capacitance ratio of 4.3:1.
Categories:
Semiconductors
Year:
2000
Session:
10
Full-text:
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Page Number(s):
543-551