ISSTT Proceedings

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Nonlinear Transport In Ballistic Semiconductor Diodes With Negative Effective Mass Carriers

Authors:
B. R. Perkins, Jun Liu, A. Zaslavsky, Z. S. Gribnikov, V. V. Mitin, E. P. De Poortere, M. Shayegan
Abstract:
We are pursuing a new class of solid-state devices capable of generating high-frequency radiation: short ballistic semiconductor diodes in which the current flow is due to carriers injected into a negative-effective-mass (NEM) region of dispersion. The resulting radiation is tunable by the source-drain voltage applied to the diode and device operation does not require magnetic fields or pumping by other oscillators. The physical mechanism responsible for high-frequency oscillation generation in such diodes lies in the instability of the ballistic NEM carrier quasineutral plasma, which forms in a large fraction of the diode base and stratifies into accumulation and depletion domains. As in the Gum diode, where the instability arises from intervalley carrier transfer, the domains travel from source to drain and give rise to current oscillations. However, in short ballistic diodes the source-drain distance L can be much smaller than in a Gunn diode; numerical simulations show that for L [less than or equal to] 0.2 ┬Ám the ballistic transport of the domains can lead to current oscillations in the THz frequency range.
Categories:
Semiconductors
Year:
2000
Session:
10
Full-text:
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Page Number(s):
573-580