ISSTT Proceedings

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Ballistic Tunneling Transit Time Devices for THz Power Generation

Authors:
J. East, G. Haddad
Abstract:
Existing transit time devices such as IMPATT and TUNNETT diodes are based on semiconductor structures. These devices have transit times and operating frequencies that are limited by the saturated velocity in the semiconductor material, the physics of carrier injection, the dielectric constant and the critical field for breakdown. The combination of a transit time and a capacitive reactance that scales with frequency results in a power and frequency scaling law of the form Prf × f2 [alpha] C material where C material is a constant that depends on the material parameters. An ideal device would have ballistic carriers and a relative dielectric constant equal to 1. This is the basis of the proposed Ballistic Tunneling Transit Time Device (BT3D), a new transit time device with a vacuum drift region and a tunneling injector. The design and performance of this new device will be described in this paper.
Categories:
Local Oscillators, Sources
Year:
2001
Session:
3
Full-text:
Download a PDF of this paper.
Page Number(s):
62-72