ISSTT Proceedings

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Very Wide IF Bandwidths in High Mobility Two-Dimensional Electron Gas Semiconductor Heterostructure Mixers

Authors:
Mark Lee, Loren N. Pfeiffer, Ken W. West
Abstract:
There has been great progress in the development of superconducting hot-electron bolometers (HEBs) for use as millimeter and sub-millimeter wave mixers. In particular, the diffusion-cooled niobium HEB has demonstrated low noise, low local oscillator (LO) power requirement, and an intermediate frequency (IF) bandwidth of 2 to 10 GHz in devices with deep sub-micron channel lengths. Yngvesson has suggested that the same principle could be applied to the two-dimensional electron gas (2DEG) in a GaAs-AlGaAs heterostructure. Because of the extremely high electron mobilities obtainable in a 2DEG, IF bandwidths much wider than possible in a superconductor should be achievable in much larger devices, with acceptable compromises in terms of gain, noise, and LO power.
Categories:
Detectors, Mixers
Year:
2001
Session:
4
Full-text:
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Page Number(s):
102