ISSTT Proceedings

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A 1.2 THz Planar Tripler Using GaAs Membrane Based Chips

Authors:
J. Bruston, A. Maestrini, D. Pukala, S. Martin, B. Nakamura, I. Mehdi
Abstract:
Fabrication technology for Submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 µW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 µW at 120 K and 250 µW at 50K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.
Categories:
Local Oscillators, Sources
Year:
2001
Session:
7
Full-text:
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Page Number(s):
310-319