ISSTT Proceedings

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InP MMIC Chip Set for Power Sources Covering 80-170 GHz

Authors:
Lorene Samoska, Vesna Radisic, Miro Micovic, Ming Hu, Paul Janke, Catherine Ngo
Abstract:
We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-┬Ám gatelength InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an fmax above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WR10 waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140- 170 GHz with 15-25 mW of output power and 8 dB gain.
Categories:
Local Oscillators, Sources
Year:
2001
Session:
11
Full-text:
Download a PDF of this paper.
Page Number(s):
477-484