ISSTT Proceedings

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Design Considerations For Heavily-Doped Cryogenic Schottky Diode Varactor Multipliers

Authors:
E. Schlecht, F. Maiwald, G. Chattopadhyay, S. Martin, I. Mehdi
Abstract:
Diode modeling for Schottky varactor frequency multipliers above 500 GHz is presented with special emphasis placed on simple models and fitted equations for rapid circuit design. Temperature- and doping-dependent mobility, resistivity and avalanche current multiplication and breakdown are presented. Next is a discussion of static junction current, including the effects of tunneling as well as thermionic emission. These results have been compared to detailed measurements made down to 80 K on diodes fabricated at JPL, followed by a discussion of the effect on multiplier efficiency. Finally, a simple model of current saturation in the undepleted active layer suitable for inclusion in harmonic balance simulators is derived.
Categories:
Local Oscillators, Sources
Year:
2001
Session:
11
Full-text:
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Page Number(s):
485-494