ISSTT Proceedings

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A Hot Spot Model for HEB Mixers Including Andreev Reflection

Authors:
H. Merkel
Abstract:
A device model for HEB mixers is described that takes two additional effects into account: Andreev reflection at the hot spot boundaries and critical current variations on the bridge. This model is capable to predict IV curves even in the unstable areas with acceptable accuracy. Based on these large signal results a more accurate small signal expansion has been developed: In the framework of this model heating due to a small signal current change acts differently from a small signal voltage change at IF.The small signal model allows accurate predictions of the conversion gain and the mixer noise including thermal fluctuation, Johnson and quantum noise.
Categories:
Hot Electron Bolometers
Year:
2002
Session:
2
Full-text:
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Page Number(s):
53-64