ISSTT Proceedings

ISSTT Proceedings

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Progress in SIS Device Fabrication for HIFI Mixer Band 2 at KOSMA

Authors:
P. Pütz, S. Glenz, C.E. Honingh, K. Jacobs
Abstract:
We present our progress in device fabrication of Nb—A10x—Nb junctions embedded into low-loss tuning circuits. These integrated tuning circuits include a NbTiN ground plane and aluminum or niobium as top conductor materials. The junctions are defined by electron beam lithography down to areas of 0.4 µm² . Instead of a lift-off process we use Chemical Mechanical Polishing (CMP) of the Si02 dielectric insulation to contact the junction top electrode. Dipstick IN measurements of devices with RNA products around 15 [Omega]µm² show a significantly higher gap voltage as compared to previously UV lithography / lift-off defined devices using otherwise identical fabrication parameters.
Categories:
Poster Session
Year:
2002
Session:
8
Full-text:
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Page Number(s):
383-390