ISSTT Proceedings

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Sideband Separating SIS Mixer with On-Substrate LO-Injection Circuitry

Authors:
V. Vassilev, R. Monje, A. Pavolotsky, I. Lapkin, C. Risacher V. Belitsky
Abstract:
We present results of the development and characterization of a second generation sideband separating (2SB) SIS mixer for 85-115 GHz band. In the mixer design the LO power is injected into the RF signal path through a -15 dB microstrip directional coupler which requires a matched termination. We use a "dot" termination, which is made of a resistive normal-metal film and is designed such that it occupies a minimum area on the substrate providing a good return loss over the whole LO band. The required sheet resistance of the film forming the dot is obtained by sputtering Ti in atmosphere containing N2. Preliminary mixer tests show minimum SSB noise temperature of 50 K and below 65 K in the band 86-115 GHz with sideband rejection around 10 dB.
Categories:
SIS
Year:
2005
Session:
3
Full-text:
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Page Number(s):
38-41