ISSTT Proceedings

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Wideband AlN-based SIS devices for frequencies around 700 GHz

Authors:
C. F. J. Lodewijk, T. Zijlstra, D. N. Loudkov, T. M. Klapwijk, F. P. Mena, A. M. Baryshev
Abstract:
We report results on SIS tunnel junctions based on AlN tunnel barriers grown with plasma nitridation from a remote inductively coupled plasma source. Results for the noise temperature are shown and compared to AlOx results in a ALMA Band 9 mixer. The parameters for AlOx devices are RnA=25 Ohn µm² with a normal state resistance of 25 Ohm and an optimized tuning circuit. For the AlN devices we have RnA = 2.9 Ohm µm² (Jc=71kA/cm²), A=0.36 µm², Vgap=2.77 mV, and Rsg/Rn = 14. The data for AlN devices with a not yet optimized tuning circuit show comparable noise temperatures and a flat noise response.
Categories:
SIS Mixers
Year:
2007
Session:
10
Full-text:
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Page Number(s):
256-259