ISSTT Proceedings

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Fabrication of GaAs Schottky Nano-diodes with T-Anodes for Submillimeter Wave Mixers

Authors:
Cécile Jung, Hui Wang, Alain Maestrini, Yong Jin
Abstract:
We report on the design and fabrication of a T-anode Schottky structure for millimeter and submillimeter wave mixers. The process for anti-parallel pairs of diodes with submicronic anode areas on 10 µm thick GaAs substrate is presented and these diodes will be used in a 330GHz subharmonic mixer block. I(V) measurements have been performed and values of the ideality factor and the reverse saturation current have been determined.
Categories:
Mixers, Schottky Devices
Year:
2008
Session:
P8
Full-text:
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Page Number(s):
517-518