ISSTT Proceedings

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NbN Phonon-Cooled Hot-Electron Bolometer Mixer with Additional Diffusion Cooling

Authors:
S. A. Ryabchun, I. V. Tretyakov, M. I. Finkel, S. N. Maslennikov, N. S. Kaurova, V. A. Seleznev, B. M. Voronov, G. N. Gol'tsman
Abstract:
We present low-noise and wide-bandwidth HEB mixers made from NbN-Au two-layer films in situ deposited on Si substrates. At 2.5 THz, the lowest double-side band receiver noise temperature was 750 K. The gain bandwidth measurements at Tc yielded a gain bandwidth of 6.5 GHz, exceeding by almost a factor of two the typical value of 3.5 GHz for phonon-cooled HEB mixers on Si substrates with no additional buffer layer. The record characteristics are attributed to the improved interface between the superconducting film and the gold contact pads.
Categories:
HEB Mixers, HEB Receivers
Year:
2009
Session:
W2
Full-text:
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Page Number(s):
151-154